Tris(4-tert-butylphenyl)sulfonium triflate
≥99% trace metals basis
- Product Code: 73443
Alias:
Tris(4-tert-butylphenyl)sulfur trifluoromethanesulfonate
CAS:
134708-14-8
| Molecular Weight: | 580.76 g./mol | Molecular Formula: | C₃₁H₃₉F₃O₃S₂ |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD02683475 | |
| Melting Point: | 250 - 253 °C | Boiling Point: | |
| Density: | Storage Condition: | room temperature |
Product Description:
This chemical is primarily used as a photoacid generator (PAG) in photolithography processes, particularly in the manufacturing of semiconductors and microelectronics. When exposed to ultraviolet (UV) light, it generates strong acids that catalyze the cross-linking or deprotection of polymers in photoresist materials. This enables the precise patterning of circuits on silicon wafers, which is critical for producing high-performance electronic devices. Its thermal stability and efficiency in acid generation make it suitable for advanced lithography techniques, including deep UV (DUV) and extreme UV (EUV) lithography. Additionally, it is employed in the development of advanced materials for coatings and imaging applications due to its ability to initiate chemical reactions upon light exposure.
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 0.050 | 10-20 days | $328.00 |
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| 0.250 | 10-20 days | $832.67 |
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Tris(4-tert-butylphenyl)sulfonium triflate
This chemical is primarily used as a photoacid generator (PAG) in photolithography processes, particularly in the manufacturing of semiconductors and microelectronics. When exposed to ultraviolet (UV) light, it generates strong acids that catalyze the cross-linking or deprotection of polymers in photoresist materials. This enables the precise patterning of circuits on silicon wafers, which is critical for producing high-performance electronic devices. Its thermal stability and efficiency in acid generation make it suitable for advanced lithography techniques, including deep UV (DUV) and extreme UV (EUV) lithography. Additionally, it is employed in the development of advanced materials for coatings and imaging applications due to its ability to initiate chemical reactions upon light exposure.
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