(4-Fluorophenyl)diphenylsulfonium triflate
- Product Code: 73784
Alias:
4-Fluorophenyldiphenylsulfonium trifluoromethanesulfonate
CAS:
154093-57-9
| Molecular Weight: | 430.44 g./mol | Molecular Formula: | C₁₉H₁₄F₄O₃S₂ |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD02683571 | |
| Melting Point: | 117 - 120 °C - lit. | Boiling Point: | |
| Density: | Storage Condition: | room temperature |
Product Description:
This chemical is primarily used as a photoacid generator (PAG) in photolithography processes, particularly in the semiconductor and microelectronics industries. When exposed to ultraviolet (UV) light, it generates strong acids that catalyze the chemical reactions necessary for patterning photoresists. This enables the precise fabrication of microstructures and circuits on silicon wafers. Its efficiency and stability under UV exposure make it a valuable component in advanced manufacturing technologies, such as the production of integrated circuits and microchips. Additionally, it is employed in the development of high-resolution imaging materials, contributing to advancements in nanotechnology and precision engineering.
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
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| 0.050 | 10-20 days | $46.98 |
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| 0.250 | 10-20 days | $134.20 |
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(4-Fluorophenyl)diphenylsulfonium triflate
This chemical is primarily used as a photoacid generator (PAG) in photolithography processes, particularly in the semiconductor and microelectronics industries. When exposed to ultraviolet (UV) light, it generates strong acids that catalyze the chemical reactions necessary for patterning photoresists. This enables the precise fabrication of microstructures and circuits on silicon wafers. Its efficiency and stability under UV exposure make it a valuable component in advanced manufacturing technologies, such as the production of integrated circuits and microchips. Additionally, it is employed in the development of high-resolution imaging materials, contributing to advancements in nanotechnology and precision engineering.
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