4,8-Bis[(2-butyl-n-octyl)oxy]benzo[1,2-b:4,5-b']dithiophene
>97.0%(HPLC)
- Product Code: 94117
CAS:
1321590-78-6
| Molecular Weight: | 558.92 g./mol | Molecular Formula: | C₃₄H₅₄O₂S₂ |
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| EC Number: | MDL Number: | ||
| Melting Point: | Boiling Point: | ||
| Density: | Storage Condition: | room temperature, dry |
Product Description:
This chemical is primarily used in the development of organic electronic materials, particularly in the field of organic photovoltaics (OPVs). Its structure makes it an effective component in the active layer of solar cells, where it enhances light absorption and charge transport properties. The compound is often incorporated into donor-acceptor copolymers to improve the efficiency and stability of the solar cells. Additionally, it is utilized in organic field-effect transistors (OFETs) due to its favorable semiconducting characteristics, contributing to better device performance. Its application extends to other optoelectronic devices, where its ability to facilitate efficient electron and hole mobility is highly valued.
Product Specification:
| Test | Specification |
|---|---|
| APPEARANCE | Light orange to Yellow to Green clear liquid to cloudy liquid |
| PURITY | 96.5-100 |
| Infrared spectrum | Conforms to Structure |
| NMR | Conforms to Structure |
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 0.100 | 10-20 days | £91.60 |
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4,8-Bis[(2-butyl-n-octyl)oxy]benzo[1,2-b:4,5-b']dithiophene
This chemical is primarily used in the development of organic electronic materials, particularly in the field of organic photovoltaics (OPVs). Its structure makes it an effective component in the active layer of solar cells, where it enhances light absorption and charge transport properties. The compound is often incorporated into donor-acceptor copolymers to improve the efficiency and stability of the solar cells. Additionally, it is utilized in organic field-effect transistors (OFETs) due to its favorable semiconducting characteristics, contributing to better device performance. Its application extends to other optoelectronic devices, where its ability to facilitate efficient electron and hole mobility is highly valued.
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