Hafnium(IV) isopropoxide isopropanol complex
99%
- Product Code: 51211
CAS:
2171-99-5
| Molecular Weight: | 474.94 g./mol | Molecular Formula: | C₁₂H₂₈HfO₄C₃H₈O |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00070460 | |
| Melting Point: | Boiling Point: | ||
| Density: | Storage Condition: | room temperature |
Product Description:
Used as a precursor in the synthesis of hafnium oxide thin films, which are essential in the production of high-k dielectric materials for semiconductor devices. It plays a crucial role in the fabrication of advanced microelectronics, including transistors and capacitors, due to its ability to form uniform and high-quality layers. Additionally, it is employed in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create coatings with precise thickness and composition. Its application extends to the development of optical coatings and protective layers in various high-tech industries.
Product Specification:
| Test | Specification |
|---|---|
| APPEARANCE | Colorless or White Crystals or Crystalline Powder |
| PURITY | 98.5-100 |
| Infrared spectrum | Conforms to Structure |
| NMR | Conforms to Structure |
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 5.000 | 10-20 days | $640.38 |
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| 25.000 | 10-20 days | $2,682.07 |
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Hafnium(IV) isopropoxide isopropanol complex
Used as a precursor in the synthesis of hafnium oxide thin films, which are essential in the production of high-k dielectric materials for semiconductor devices. It plays a crucial role in the fabrication of advanced microelectronics, including transistors and capacitors, due to its ability to form uniform and high-quality layers. Additionally, it is employed in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create coatings with precise thickness and composition. Its application extends to the development of optical coatings and protective layers in various high-tech industries.
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