Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II)
98%
- Product Code: 55165
CAS:
329735-79-7
| Molecular Weight: | 575.8000 g./mol | Molecular Formula: | C₃₀H₅₀O₄Ru |
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| EC Number: | MDL Number: | MFCD01073791 | |
| Melting Point: | Boiling Point: | ||
| Density: | Storage Condition: | room temperature |
Product Description:
This chemical is primarily used in the field of materials science, particularly in the deposition of thin films. It serves as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create ruthenium-containing films. These films are essential in the semiconductor industry for applications such as diffusion barriers, conductive layers, and electrodes in integrated circuits. Additionally, its stability and volatility make it suitable for producing high-purity ruthenium coatings, which are critical in enhancing the performance and durability of electronic devices.
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 0.100 | 10-20 days | Ft27,150.75 |
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Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II)
This chemical is primarily used in the field of materials science, particularly in the deposition of thin films. It serves as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create ruthenium-containing films. These films are essential in the semiconductor industry for applications such as diffusion barriers, conductive layers, and electrodes in integrated circuits. Additionally, its stability and volatility make it suitable for producing high-purity ruthenium coatings, which are critical in enhancing the performance and durability of electronic devices.
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