Phenyl[3-(trifluoromethyl)phenyl]iodonium Trifluoromethanesulfonate
≥98%
- Product Code: 60073
CAS:
905718-46-9
Molecular Weight: | 498.18 g./mol | Molecular Formula: | C₁₄H₉F₆IO₃S |
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EC Number: | MDL Number: | MFCD21608481 | |
Melting Point: | 110-114°C | Boiling Point: | |
Density: | Storage Condition: | room temperature |
Product Description:
This chemical is widely used as a photoacid generator (PAG) in the field of photolithography, particularly in the manufacturing of semiconductors and microelectronics. It plays a critical role in the production of photoresists, where it generates strong acids upon exposure to ultraviolet (UV) light. These acids catalyze the chemical reactions necessary to develop the desired patterns on silicon wafers, enabling the precise fabrication of integrated circuits and other microcomponents. Its high efficiency and stability under UV exposure make it a preferred choice in advanced lithographic processes, including deep UV and extreme UV (EUV) lithography. Additionally, it is utilized in the synthesis of organic compounds and materials where controlled acid generation is required.
Sizes / Availability / Pricing:
Size (g) | Availability | Price | Quantity |
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0.200 | 10-20 days | ฿2,450.00 |
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1.000 | 10-20 days | ฿9,900.00 |
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Phenyl[3-(trifluoromethyl)phenyl]iodonium Trifluoromethanesulfonate
This chemical is widely used as a photoacid generator (PAG) in the field of photolithography, particularly in the manufacturing of semiconductors and microelectronics. It plays a critical role in the production of photoresists, where it generates strong acids upon exposure to ultraviolet (UV) light. These acids catalyze the chemical reactions necessary to develop the desired patterns on silicon wafers, enabling the precise fabrication of integrated circuits and other microcomponents. Its high efficiency and stability under UV exposure make it a preferred choice in advanced lithographic processes, including deep UV and extreme UV (EUV) lithography. Additionally, it is utilized in the synthesis of organic compounds and materials where controlled acid generation is required.
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