Indium arsenide
99% metals basis
- Product Code: 66779
CAS:
1303-11-3
| Molecular Weight: | 189.74 g./mol | Molecular Formula: | InAs |
|---|---|---|---|
| EC Number: | 215-115-3 | MDL Number: | MFCD00016144 |
| Melting Point: | 936°C | Boiling Point: | |
| Density: | Storage Condition: | room temperature |
Product Description:
Indium arsenide is widely used in the field of electronics and optoelectronics due to its excellent semiconductor properties. It is a key material in the production of high-speed transistors, particularly in high-frequency and microwave applications, where its high electron mobility allows for efficient signal processing.
In optoelectronics, it is utilized in the fabrication of infrared detectors and lasers, making it essential for applications such as night-vision devices, thermal imaging, and fiber optic communication systems. Its ability to operate in the infrared spectrum also makes it valuable in medical imaging and environmental monitoring technologies.
Additionally, indium arsenide is a crucial component in the development of quantum dots and nanostructures, which are used in advanced research and next-generation technologies like quantum computing and nanoscale sensors. Its compatibility with other III-V semiconductors further enhances its versatility in creating complex, high-performance devices.
Product Specification:
| Test | Specification |
|---|---|
| PURITYBASED ON TRACE METALS ANALYSIS | 99 100% |
| TOTAL METALLIC IMPURITIES | 0ppm 10000ppm |
| ICP: CONFIRMS INDIUM D | COMPONENT CONFIRME |
| X-RAY DIFFRACTION | Conforms to Structure |
| APPEARANCE | Gray solid |
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 0.500 | 10-20 days | $53.07 |
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| 2.000 | 10-20 days | $168.13 |
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| 10.000 | 10-20 days | $632.61 |
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Indium arsenide
Indium arsenide is widely used in the field of electronics and optoelectronics due to its excellent semiconductor properties. It is a key material in the production of high-speed transistors, particularly in high-frequency and microwave applications, where its high electron mobility allows for efficient signal processing.
In optoelectronics, it is utilized in the fabrication of infrared detectors and lasers, making it essential for applications such as night-vision devices, thermal imaging, and fiber optic communication systems. Its ability to operate in the infrared spectrum also makes it valuable in medical imaging and environmental monitoring technologies.
Additionally, indium arsenide is a crucial component in the development of quantum dots and nanostructures, which are used in advanced research and next-generation technologies like quantum computing and nanoscale sensors. Its compatibility with other III-V semiconductors further enhances its versatility in creating complex, high-performance devices.
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