Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)gallium(III)
98%
- Product Code: 68360
CAS:
34228-15-4
| Molecular Weight: | 619.54 g./mol | Molecular Formula: | C₃₃H₅₇GaO₆ |
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| EC Number: | MDL Number: | MFCD00058705 | |
| Melting Point: | Boiling Point: | ||
| Density: | Storage Condition: | 2-8°C, protected from light, inert gas |
Product Description:
This chemical is primarily used in the field of materials science, particularly in the synthesis of advanced materials. It serves as a precursor for the deposition of gallium-containing thin films, which are essential in the production of semiconductors and optoelectronic devices. These thin films are crucial for applications such as light-emitting diodes (LEDs), solar cells, and transistors. Additionally, it is employed in chemical vapor deposition (CVD) processes to create high-purity gallium oxide layers, which are valued for their electrical insulation properties and thermal stability. Its role in nanotechnology is also notable, where it aids in the development of nanostructured materials with tailored electronic and optical properties.
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 1.000 | 10-20 days | ฿7,722.00 |
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Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)gallium(III)
This chemical is primarily used in the field of materials science, particularly in the synthesis of advanced materials. It serves as a precursor for the deposition of gallium-containing thin films, which are essential in the production of semiconductors and optoelectronic devices. These thin films are crucial for applications such as light-emitting diodes (LEDs), solar cells, and transistors. Additionally, it is employed in chemical vapor deposition (CVD) processes to create high-purity gallium oxide layers, which are valued for their electrical insulation properties and thermal stability. Its role in nanotechnology is also notable, where it aids in the development of nanostructured materials with tailored electronic and optical properties.
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