Trimethylgermanium chloride
98%
- Product Code: 88807
Alias:
Trimethylchlorogermane
CAS:
1529-47-1
| Molecular Weight: | 153.20 g./mol | Molecular Formula: | C₃H₉ClGe |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00000462 | |
| Melting Point: | -13°C (Lit.) | Boiling Point: | 102°C (Lit.) |
| Density: | 1.24 g/mL at 25 °C (lit.) | Storage Condition: | Room temperature, sealed, dry |
Product Description:
Trimethylgermanium chloride is primarily used in the semiconductor industry as a precursor for the deposition of germanium-containing thin films. These films are essential in the fabrication of advanced electronic devices, such as transistors and solar cells, due to their excellent electrical properties. Additionally, it serves as a key reagent in organometallic chemistry for synthesizing various germanium-based compounds, which are explored for their potential in catalysis and material science. Its role in chemical vapor deposition (CVD) processes is particularly significant, enabling the production of high-purity germanium layers critical for optoelectronic applications.
Product Specification:
| Test | Specification |
|---|---|
| APPEARANCE | Colorless - Almost colorless Liquid |
| PURITY | 98-100 |
| SPECIFIC GRAVITY 2020 | 1.2480-1.2570 |
| Refractive index n20D | 1.4320-1.4350 |
| Infrared spectrum | Conforms to Structure |
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 0.250 | 10-20 days | ฿5,280.00 |
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| 1.000 | 10-20 days | ฿17,600.00 |
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Trimethylgermanium chloride
Trimethylgermanium chloride is primarily used in the semiconductor industry as a precursor for the deposition of germanium-containing thin films. These films are essential in the fabrication of advanced electronic devices, such as transistors and solar cells, due to their excellent electrical properties. Additionally, it serves as a key reagent in organometallic chemistry for synthesizing various germanium-based compounds, which are explored for their potential in catalysis and material science. Its role in chemical vapor deposition (CVD) processes is particularly significant, enabling the production of high-purity germanium layers critical for optoelectronic applications.
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