Tin arsenide
≥99%
- Product Code: 244173
CAS:
39332-13-3
| Molecular Weight: | 193.61 g./mol | Molecular Formula: | SnAs |
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| EC Number: | MDL Number: | MFCD00148646 | |
| Melting Point: | Boiling Point: | ||
| Density: | Storage Condition: | Room temperature |
Product Description:
Tin arsenide is primarily used in semiconductor applications due to its electronic properties. It serves as a precursor material in the synthesis of advanced thermoelectric compounds, where it contributes to the development of efficient heat-to-electricity conversion systems. The compound is also investigated for use in optoelectronic devices, particularly in infrared detectors and photovoltaic cells, owing to its favorable band structure. In materials research, tin arsenide is employed to fabricate nanostructured films and heterojunctions for next-generation electronic components. Additionally, it plays a role in the study of topological insulators, where its unique surface conductivity and bulk insulation characteristics support advancements in quantum computing and spintronics.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 1.000 | 10-20 days | €59.20 |
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| 5.000 | 10-20 days | €229.12 |
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Tin arsenide
Tin arsenide is primarily used in semiconductor applications due to its electronic properties. It serves as a precursor material in the synthesis of advanced thermoelectric compounds, where it contributes to the development of efficient heat-to-electricity conversion systems. The compound is also investigated for use in optoelectronic devices, particularly in infrared detectors and photovoltaic cells, owing to its favorable band structure. In materials research, tin arsenide is employed to fabricate nanostructured films and heterojunctions for next-generation electronic components. Additionally, it plays a role in the study of topological insulators, where its unique surface conductivity and bulk insulation characteristics support advancements in quantum computing and spintronics.
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