Trimethyl((4-nitrophenyl)ethynyl)silane
98%
- Product Code: 244625
CAS:
75867-38-8
| Molecular Weight: | 219.31 g./mol | Molecular Formula: | C₁₁H₁₃NO₂Si |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00555128 | |
| Melting Point: | Boiling Point: | ||
| Density: | Storage Condition: | 2-8°C |
Product Description:
Used as a key intermediate in organic synthesis, particularly in the preparation of conjugated materials for optoelectronic devices. Its ethynyl group enables coupling reactions, making it valuable in constructing molecular wires and organic semiconductors. Commonly employed in Sonogashira and other palladium-catalyzed cross-coupling reactions to build extended π-systems. The nitrophenyl moiety provides a handle for further functionalization or acts as an electron-withdrawing group, influencing electronic properties in sensor design and nonlinear optical materials. Also utilized in surface modification of silicon-based materials due to the trimethylsilyl group, enhancing stability and compatibility in thin-film applications.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
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| 1.000 | 10-20 days | Ft69,945.02 |
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| 5.000 | 10-20 days | Ft215,794.50 |
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| 0.100 | 10-20 days | Ft18,923.84 |
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| 0.250 | 10-20 days | Ft31,574.58 |
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| 10.000 | 10-20 days | Ft314,177.56 |
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Trimethyl((4-nitrophenyl)ethynyl)silane
Used as a key intermediate in organic synthesis, particularly in the preparation of conjugated materials for optoelectronic devices. Its ethynyl group enables coupling reactions, making it valuable in constructing molecular wires and organic semiconductors. Commonly employed in Sonogashira and other palladium-catalyzed cross-coupling reactions to build extended π-systems. The nitrophenyl moiety provides a handle for further functionalization or acts as an electron-withdrawing group, influencing electronic properties in sensor design and nonlinear optical materials. Also utilized in surface modification of silicon-based materials due to the trimethylsilyl group, enhancing stability and compatibility in thin-film applications.
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