Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)zirconium(IV)
98%
- Product Code: 53438
CAS:
18865-74-2
Molecular Weight: | 824.29 g./mol | Molecular Formula: | C₄₄H₇₆O₈Zr |
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EC Number: | MDL Number: | ||
Melting Point: | 332-339℃ | Boiling Point: | 180℃ at 760 mmHg |
Density: | Storage Condition: | 2-8℃ |
Product Description:
This chemical is primarily used as a precursor in the deposition of zirconium oxide thin films through processes like chemical vapor deposition (CVD) or atomic layer deposition (ALD). These films are essential in the semiconductor industry for creating high-k dielectric layers in advanced electronic devices, such as transistors and capacitors. Additionally, it finds application in the production of specialized coatings that enhance the thermal and chemical resistance of materials used in high-temperature environments. Its role in catalysis is also notable, particularly in organic synthesis reactions where it aids in the formation of complex molecular structures.
Product Specification:
Test | Specification |
---|---|
APPEARANCE | White Powder or Crystals |
PURITY | 97.5-100 |
Infrared spectrum | Conforms to Structure |
NMR | Conforms to Structure |
Sizes / Availability / Pricing:
Size (g) | Availability | Price | Quantity |
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1.000 | 10-20 days | ฿5,290.00 |
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Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)zirconium(IV)
This chemical is primarily used as a precursor in the deposition of zirconium oxide thin films through processes like chemical vapor deposition (CVD) or atomic layer deposition (ALD). These films are essential in the semiconductor industry for creating high-k dielectric layers in advanced electronic devices, such as transistors and capacitors. Additionally, it finds application in the production of specialized coatings that enhance the thermal and chemical resistance of materials used in high-temperature environments. Its role in catalysis is also notable, particularly in organic synthesis reactions where it aids in the formation of complex molecular structures.
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