Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)bismuth(III)

99.9%

  • Product Code: 68358
  CAS:    142617-53-6
Molecular Weight: 758.79 g./mol Molecular Formula: C₃₃H₅₇BiO₆
EC Number: MDL Number: MFCD00064763
Melting Point: 114-116 °C Boiling Point:
Density: Storage Condition: room temperature, dry, inert gas
Product Description: This compound is primarily utilized in the field of materials science, particularly in the deposition of thin films. It serves as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create bismuth-containing films. These films are essential in the development of advanced electronic and optoelectronic devices, such as sensors, capacitors, and photovoltaic cells. Additionally, its role in the synthesis of nanomaterials is noteworthy, as it contributes to the production of bismuth-based nanoparticles with potential applications in catalysis and biomedical imaging. Its stability and compatibility with high-temperature processes make it a valuable component in the fabrication of complex material systems.
Sizes / Availability / Pricing:
Size (g) Availability Price Quantity
0.250 10-20 days ฿4,482.00
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Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)bismuth(III)
This compound is primarily utilized in the field of materials science, particularly in the deposition of thin films. It serves as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create bismuth-containing films. These films are essential in the development of advanced electronic and optoelectronic devices, such as sensors, capacitors, and photovoltaic cells. Additionally, its role in the synthesis of nanomaterials is noteworthy, as it contributes to the production of bismuth-based nanoparticles with potential applications in catalysis and biomedical imaging. Its stability and compatibility with high-temperature processes make it a valuable component in the fabrication of complex material systems.
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