Tetrakis(ethylmethylamino)zirconium(IV)

≥99.99% trace metals basis

  • Product Code: 91292
  CAS:    175923-04-3
Molecular Weight: 323.63 g./mol Molecular Formula: C₁₂H₃₂N₄Zr
EC Number: MDL Number: MFCD03427131
Melting Point: Boiling Point: 81 °C at 0.1 mmHg (lit.)
Density: 1.049 g/mL at 25 °C (lit.) Storage Condition: room temperature
Product Description: Used as a precursor in the chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create thin films of zirconium oxide. These films are essential in the semiconductor industry for manufacturing high-k dielectric materials in advanced electronic devices. It also finds application in the production of coatings that enhance the thermal and chemical stability of various materials. Additionally, it is employed in research and development for synthesizing novel zirconium-based compounds with potential uses in catalysis and material science.
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Size (g) Availability Price Quantity
5.000 10-20 days $885.99
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Tetrakis(ethylmethylamino)zirconium(IV)
Used as a precursor in the chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create thin films of zirconium oxide. These films are essential in the semiconductor industry for manufacturing high-k dielectric materials in advanced electronic devices. It also finds application in the production of coatings that enhance the thermal and chemical stability of various materials. Additionally, it is employed in research and development for synthesizing novel zirconium-based compounds with potential uses in catalysis and material science.
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