4-(Ethoxycarbonyl)-N,N,N-trimethylbenzenaminium trifluoromethanesulfonate
≥95%
- Product Code: 118667
CAS:
124915-06-6
| Molecular Weight: | 357.35 g./mol | Molecular Formula: | C₁₃H₁₈F₃NO₅S |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD17014669 | |
| Melting Point: | Boiling Point: | ||
| Density: | Storage Condition: | room temperature, stored under inert gas |
Product Description:
This compound is primarily used as a photoacid generator (PAG) in the field of photolithography, particularly in the manufacturing of semiconductors and microelectronics. It plays a critical role in the patterning process, where it generates acid upon exposure to ultraviolet (UV) light. The acid produced catalyzes the chemical reactions necessary to create precise patterns on silicon wafers, enabling the production of intricate electronic circuits. Its efficiency in generating acid and its stability under processing conditions make it a valuable component in advanced lithographic techniques. Additionally, it is employed in the development of high-resolution photoresists, contributing to the miniaturization and enhanced performance of electronic devices.
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 0.100 | 10-20 days | ฿6,075.00 |
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| 0.250 | 10-20 days | ฿9,684.00 |
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| 1.000 | 10-20 days | ฿24,273.00 |
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4-(Ethoxycarbonyl)-N,N,N-trimethylbenzenaminium trifluoromethanesulfonate
This compound is primarily used as a photoacid generator (PAG) in the field of photolithography, particularly in the manufacturing of semiconductors and microelectronics. It plays a critical role in the patterning process, where it generates acid upon exposure to ultraviolet (UV) light. The acid produced catalyzes the chemical reactions necessary to create precise patterns on silicon wafers, enabling the production of intricate electronic circuits. Its efficiency in generating acid and its stability under processing conditions make it a valuable component in advanced lithographic techniques. Additionally, it is employed in the development of high-resolution photoresists, contributing to the miniaturization and enhanced performance of electronic devices.
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