5-((Trimethylsilyl)ethynyl)thiophene-2-carbaldehyde
98%
- Product Code: 131966
CAS:
206768-50-5
| Molecular Weight: | 208.35 g./mol | Molecular Formula: | C₁₀H₁₂OSSi |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD17168296 | |
| Melting Point: | Boiling Point: | 275.6±40.0 °C(Predicted) | |
| Density: | 1.07±0.1 g/cm3(Predicted) | Storage Condition: | 2-8°C, light-proof, inert gas |
Product Description:
Used in organic synthesis as a building block for conjugated materials, particularly in the development of organic semiconductors and conductive polymers. Its aldehyde group allows for further functionalization via cross-coupling or condensation reactions, while the trimethylsilyl-protected ethynyl group can be deprotected to form acetylene linkages, enabling extension of π-conjugated systems. Commonly employed in the preparation of thiophene-based oligomers and polymers for applications in organic field-effect transistors (OFETs), organic photovoltaics (OPVs), and organic light-emitting diodes (OLEDs). Its structural rigidity and electronic properties enhance charge transport and light absorption characteristics in thin-film devices.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
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| 0.250 | 10-20 days | $125.44 |
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| 1.000 | 10-20 days | $337.94 |
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| 5.000 | 10-20 days | $1,280.12 |
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5-((Trimethylsilyl)ethynyl)thiophene-2-carbaldehyde
Used in organic synthesis as a building block for conjugated materials, particularly in the development of organic semiconductors and conductive polymers. Its aldehyde group allows for further functionalization via cross-coupling or condensation reactions, while the trimethylsilyl-protected ethynyl group can be deprotected to form acetylene linkages, enabling extension of π-conjugated systems. Commonly employed in the preparation of thiophene-based oligomers and polymers for applications in organic field-effect transistors (OFETs), organic photovoltaics (OPVs), and organic light-emitting diodes (OLEDs). Its structural rigidity and electronic properties enhance charge transport and light absorption characteristics in thin-film devices.
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