Bis(Hexafluoroacetylacetonato)Cobalt(II) Dihydrate
97%
- Product Code: 153771
CAS:
55555-98-1
| Molecular Weight: | 302.01 g./mol | Molecular Formula: | C₁₀H₂CoF₁₂O₄.₂H₂O |
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| EC Number: | MDL Number: | ||
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| Density: | Storage Condition: | Room temperature |
Product Description:
Used as a precursor in chemical vapor deposition (CVD) processes to deposit cobalt-containing thin films, which are essential in semiconductor manufacturing for diffusion barriers and electrical contacts. Its high volatility and thermal stability make it suitable for precise, controlled deposition at relatively low temperatures. Also employed in research for synthesizing cobalt-based nanomaterials and catalysts due to its well-defined coordination structure. The presence of fluorinated ligands enhances solubility in nonpolar solvents, enabling use in solution-based coating techniques.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 1g | 10-20 days | ฿1,410.00 |
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| 5g | 10-20 days | ฿6,750.00 |
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| 10g | 10-20 days | ฿13,130.00 |
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| 25g | 10-20 days | ฿28,540.00 |
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Bis(Hexafluoroacetylacetonato)Cobalt(II) Dihydrate
Used as a precursor in chemical vapor deposition (CVD) processes to deposit cobalt-containing thin films, which are essential in semiconductor manufacturing for diffusion barriers and electrical contacts. Its high volatility and thermal stability make it suitable for precise, controlled deposition at relatively low temperatures. Also employed in research for synthesizing cobalt-based nanomaterials and catalysts due to its well-defined coordination structure. The presence of fluorinated ligands enhances solubility in nonpolar solvents, enabling use in solution-based coating techniques.
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