Copper(I) hexafluoro-2,4-pentanedionate 2-butyne complex

  • Product Code: 157127
  CAS:    137007-13-7
Molecular Weight: 324.69 g./mol Molecular Formula: C₉H₇CuF₆O₂
EC Number: MDL Number:
Melting Point: 68-73 °C Boiling Point: 40 °C at 0.1 mmHg
Density: Storage Condition: 2-8°C
Product Description: Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing copper thin films in semiconductor manufacturing. Its volatility and thermal stability allow for precise, low-temperature deposition, making it suitable for advanced microelectronic devices where copper acts as a conductive layer. The complex helps achieve high-purity, uniform coatings essential in integrated circuits and printed circuit boards. It is favored in applications requiring minimal carbon contamination due to its clean decomposition profile.
Sizes / Availability / Pricing:
Size Availability Price Quantity
1g 10-20 days ฿35,990.00
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Copper(I) hexafluoro-2,4-pentanedionate 2-butyne complex
Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing copper thin films in semiconductor manufacturing. Its volatility and thermal stability allow for precise, low-temperature deposition, making it suitable for advanced microelectronic devices where copper acts as a conductive layer. The complex helps achieve high-purity, uniform coatings essential in integrated circuits and printed circuit boards. It is favored in applications requiring minimal carbon contamination due to its clean decomposition profile.
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