Di-tert-butyl 1,4-dioxo-3,6-di(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-2,5(1H,4H)-dicarboxylate
95%
- Product Code: 171329
CAS:
1046864-83-8
| Molecular Weight: | 500.59 g./mol | Molecular Formula: | C₂₄H₂₄N₂O₆S₂ |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD28098465 | |
| Melting Point: | Boiling Point: | 593.5±60.0°C | |
| Density: | Storage Condition: | Room temperature, dry |
Product Description:
Used as a high-performance organic semiconductor material in printed electronics and flexible devices. Its extended conjugated structure enables strong intermolecular interactions, making it suitable for organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). The compound acts as an electron-accepting component in donor-acceptor type polymers, enhancing charge transport and improving device efficiency. It is also employed in thin-film transistors due to its good thermal stability and solution processability, allowing for low-cost fabrication techniques such as inkjet printing or spin coating. Additionally, its deep LUMO energy level supports air-stable n-type semiconductor behavior, which is critical for complementary logic circuits.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 25mg | 10-20 days | ฿2,860.00 |
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| 100mg | 10-20 days | ฿6,880.00 |
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Di-tert-butyl 1,4-dioxo-3,6-di(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-2,5(1H,4H)-dicarboxylate
Used as a high-performance organic semiconductor material in printed electronics and flexible devices. Its extended conjugated structure enables strong intermolecular interactions, making it suitable for organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). The compound acts as an electron-accepting component in donor-acceptor type polymers, enhancing charge transport and improving device efficiency. It is also employed in thin-film transistors due to its good thermal stability and solution processability, allowing for low-cost fabrication techniques such as inkjet printing or spin coating. Additionally, its deep LUMO energy level supports air-stable n-type semiconductor behavior, which is critical for complementary logic circuits.
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