Hafnium(IV) oxide
99.9% metals basis, D50=200nm
- Product Code: 191737
Alias:
Hafnium oxide (IV); Hafnium dioxide
CAS:
12055-23-1
| Molecular Weight: | 210.49 g./mol | Molecular Formula: | HfO₂ |
|---|---|---|---|
| EC Number: | 235-013-2 | MDL Number: | MFCD00003565 |
| Melting Point: | 2810 °C | Boiling Point: | |
| Density: | 9.68 g/mL at 25 °C(lit.) | Storage Condition: | Room temperature |
Product Description:
Used as a high-k dielectric material in semiconductor devices, particularly in advanced transistor gate stacks to reduce leakage current. Employed in optical coatings due to its high refractive index and durability, making it suitable for anti-reflective and protective layers in lenses and laser components. Applied in resistive switching memory devices for next-generation electronics. Also investigated for use in nuclear reactor control rods because of hafnium’s high neutron absorption capability, although the oxide form is less common for this purpose. Serves as a wear-resistant coating in cutting tools when deposited as a thin film via physical vapor deposition.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 25.000 G | 10-20 days | ฿10,240.00 |
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| 100.000 G | 10-20 days | ฿30,440.00 |
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| 5.000 G | 10-20 days | ฿2,990.00 |
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Hafnium(IV) oxide
Used as a high-k dielectric material in semiconductor devices, particularly in advanced transistor gate stacks to reduce leakage current. Employed in optical coatings due to its high refractive index and durability, making it suitable for anti-reflective and protective layers in lenses and laser components. Applied in resistive switching memory devices for next-generation electronics. Also investigated for use in nuclear reactor control rods because of hafnium’s high neutron absorption capability, although the oxide form is less common for this purpose. Serves as a wear-resistant coating in cutting tools when deposited as a thin film via physical vapor deposition.
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