Hafnium dimethylamide

97%

Product Code: 191830

CAS: 19962-11-9

Molecular Weight:	354.793 g./mol	Molecular Formula:	C₈H₂₄HfN₄
EC Number:		MDL Number:
Melting Point:	26-29 °C(lit.)	Boiling Point:	85 °C at 0.1 mmHg
Density:		Storage Condition:	2-8°C

Product Description: Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing hafnium-containing thin films, especially hafnium oxide (HfO₂). These films serve as high-k dielectrics in advanced semiconductor devices, including transistors and dynamic random-access memory (DRAM), enabling improved performance and reduced leakage current. The compound’s volatility and thermal stability make it suitable for precise, controlled deposition at relatively low temperatures. It is also explored in atomic layer deposition (ALD) processes for nanoscale electronic applications.

Sizes / Availability / Pricing:

Size	Availability	Price	Quantity
1.000 G	10-20 days	฿31,550.00	+ -

Hafnium dimethylamide

Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing hafnium-containing thin films, especially hafnium oxide (HfO₂). These films serve as high-k dielectrics in advanced semiconductor devices, including transistors and dynamic random-access memory (DRAM), enabling improved performance and reduced leakage current. The compound’s volatility and thermal stability make it suitable for precise, controlled deposition at relatively low temperatures. It is also explored in atomic layer deposition (ALD) processes for nanoscale electronic applications.

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Hafnium dimethylamide

97%

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