HAFNIUM N-BUTOXIDE
60% in n-butoxide, Hf: 22.6 wt%
- Product Code: 192128
CAS:
22411-22-9
| Molecular Weight: | 470.94 g./mol | Molecular Formula: | C₁₆H₃₆HfO₄ |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00236545 | |
| Melting Point: | Boiling Point: | 280-5°C/0.01mmHg | |
| Density: | Storage Condition: | Room temperature, dry, sealed, inflatable |
Product Description:
Used primarily as a precursor in sol-gel processes for producing hafnium dioxide (HfO₂) thin films. These films are critical in semiconductor manufacturing, especially as high-k dielectrics in advanced transistor gate stacks, enabling improved performance and reduced leakage current in microelectronic devices. Also employed in coatings requiring high thermal stability and corrosion resistance. Its reactivity allows for controlled hydrolysis and deposition techniques like atomic layer deposition (ALD) and chemical vapor deposition (CVD), making it valuable in optical and electronic applications.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 25.000 G | 10-20 days | ฿30,900.00 |
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| 5.000 G | 10-20 days | ฿9,420.00 |
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HAFNIUM N-BUTOXIDE
Used primarily as a precursor in sol-gel processes for producing hafnium dioxide (HfO₂) thin films. These films are critical in semiconductor manufacturing, especially as high-k dielectrics in advanced transistor gate stacks, enabling improved performance and reduced leakage current in microelectronic devices. Also employed in coatings requiring high thermal stability and corrosion resistance. Its reactivity allows for controlled hydrolysis and deposition techniques like atomic layer deposition (ALD) and chemical vapor deposition (CVD), making it valuable in optical and electronic applications.
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