As solution
1000µg/ml,1.0 mol/L HNO3
- Product Code: 199361
| Molecular Weight: | Molecular Formula: | ||
|---|---|---|---|
| EC Number: | MDL Number: | ||
| Melting Point: | Boiling Point: | ||
| Density: | Storage Condition: | 2~8 ℃ |
Product Description:
Used as a precursor in the synthesis of gallium arsenide (GaAs) and other III-V semiconductor materials essential in high-speed electronics, optoelectronics, and photovoltaic devices. Commonly employed in metalorganic vapor phase epitaxy (MOVPE) processes to deposit thin films for LEDs, laser diodes, and solar cells. Also utilized in research settings for doping and nanostructure fabrication due to its reactivity and ability to introduce arsenic into crystalline lattices. Requires careful handling because of high toxicity and pyrophoric nature.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 100ml | 10-20 days | ฿3,160.00 |
+
-
|
| 50ml | 10-20 days | ฿1,960.00 |
+
-
|
As solution
Used as a precursor in the synthesis of gallium arsenide (GaAs) and other III-V semiconductor materials essential in high-speed electronics, optoelectronics, and photovoltaic devices. Commonly employed in metalorganic vapor phase epitaxy (MOVPE) processes to deposit thin films for LEDs, laser diodes, and solar cells. Also utilized in research settings for doping and nanostructure fabrication due to its reactivity and ability to introduce arsenic into crystalline lattices. Requires careful handling because of high toxicity and pyrophoric nature.
| Mechanism | - |
| Appearance | - |
| Longevity | - |
| Strength | - |
| Storage | - |
| Shelf Life | - |
| Allergen(s) | - |
| Dosage (Range) | - |
| Recommended Dosage | - |
| Dosage (Per Day) | - |
| Recommended Dosage (Per Day) | - |
| Mix Method | - |
| Heat Resistance | - |
| Stable in pH range | - |
| Solubility | - |
| Product Types | - |
| INCI | - |
Purchase History for
Loading purchase history...
Cart
No products
Subtotal:
฿0.00
฿0.00
Total :