Indium(III) phosphide
99.9999% metals basis
- Product Code: 200170
CAS:
22398-80-7
| Molecular Weight: | 145.79 g./mol | Molecular Formula: | InP |
|---|---|---|---|
| EC Number: | 244-959-5 | MDL Number: | MFCD00016153 |
| Melting Point: | 1070°C | Boiling Point: | |
| Density: | 4.787 g/cm3 | Storage Condition: | Room temperature |
Product Description:
Indium(III) phosphide is widely used in optoelectronics and high-speed electronic devices. It serves as a key material in the production of infrared light-emitting diodes (LEDs), laser diodes, and photodetectors due to its favorable direct bandgap and high electron mobility. It is also employed in high-efficiency solar cells, especially in multi-junction photovoltaic devices used in space and concentrated solar power systems. Its compatibility with heterojunction bipolar transistors (HBTs) and integrated circuits for microwave and millimeter-wave applications makes it valuable in telecommunications and radar systems. Additionally, it acts as a substrate or buffer layer for growing other III-V semiconductor compounds in advanced device structures.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 1g | 10-20 days | ฿7,550.00 |
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| 5g | 10-20 days | ฿35,000.00 |
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Indium(III) phosphide
Indium(III) phosphide is widely used in optoelectronics and high-speed electronic devices. It serves as a key material in the production of infrared light-emitting diodes (LEDs), laser diodes, and photodetectors due to its favorable direct bandgap and high electron mobility. It is also employed in high-efficiency solar cells, especially in multi-junction photovoltaic devices used in space and concentrated solar power systems. Its compatibility with heterojunction bipolar transistors (HBTs) and integrated circuits for microwave and millimeter-wave applications makes it valuable in telecommunications and radar systems. Additionally, it acts as a substrate or buffer layer for growing other III-V semiconductor compounds in advanced device structures.
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