INDIUM(III) ISOPROPOXIDE
99.9%
- Product Code: 200419
CAS:
38218-24-5
| Molecular Weight: | 292.08 g./mol | Molecular Formula: | C₉H₂₁InO₃ |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00210318 | |
| Melting Point: | 145 °C (dec.) | Boiling Point: | |
| Density: | 0.808 g/mL at 25°C | Storage Condition: | Room temperature |
Product Description:
Used as a precursor in the synthesis of indium-based transparent conductive oxides, particularly indium tin oxide (ITO) thin films, which are essential in flat panel displays, touch screens, and solar cells. It serves as a key component in sol-gel processes for producing high-purity coatings with uniform thickness and excellent optical clarity. Also employed in the fabrication of semiconductor materials and electronic ceramics due to its reactivity and ability to form indium-containing complexes under controlled conditions. Its liquid form makes it suitable for vapor deposition techniques like chemical vapor deposition (CVD) and atomic layer deposition (ALD).
Product Specification:
| Test | Specification |
|---|---|
| APPEARANCE | solid |
| Purity (%) | 99.9-100 |
| Infrared Spectrum | Conforms to Structure |
| NMR | Conforms to Structure |
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 1g | 10-20 days | ฿13,172.50 |
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INDIUM(III) ISOPROPOXIDE
Used as a precursor in the synthesis of indium-based transparent conductive oxides, particularly indium tin oxide (ITO) thin films, which are essential in flat panel displays, touch screens, and solar cells. It serves as a key component in sol-gel processes for producing high-purity coatings with uniform thickness and excellent optical clarity. Also employed in the fabrication of semiconductor materials and electronic ceramics due to its reactivity and ability to form indium-containing complexes under controlled conditions. Its liquid form makes it suitable for vapor deposition techniques like chemical vapor deposition (CVD) and atomic layer deposition (ALD).
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