Indium(2, 2, 6, 6-tetramethyl-3, 5-heptanedionate)

98%

  • Product Code: 200768
  CAS:    34269-03-9
Molecular Weight: 664.63 g./mol Molecular Formula: C₃₃H₅₇InO₆
EC Number: MDL Number: MFCD00236550
Melting Point: Boiling Point:
Density: Storage Condition: 2-8°C, Inert Gas
Product Description: Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing indium-containing thin films, especially in the production of compound semiconductors like indium gallium arsenide (InGaAs) and indium phosphide (InP). These materials are critical in high-speed electronics, photodetectors, laser diodes, and optoelectronic devices. The compound’s volatility and thermal stability make it suitable for precise, controlled delivery of indium in vapor phase processes. It is also employed in atomic layer deposition (ALD) for advanced microelectronics and nanoscale device fabrication. Its high purity and clean decomposition characteristics help achieve uniform, high-quality films essential in semiconductor manufacturing.
Sizes / Availability / Pricing:
Size Availability Price Quantity
100mg 10-20 days $59.88
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1g 10-20 days $424.48
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5g 10-20 days $1,736.08
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250mg 10-20 days $138.84
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Indium(2, 2, 6, 6-tetramethyl-3, 5-heptanedionate)
Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing indium-containing thin films, especially in the production of compound semiconductors like indium gallium arsenide (InGaAs) and indium phosphide (InP). These materials are critical in high-speed electronics, photodetectors, laser diodes, and optoelectronic devices. The compound’s volatility and thermal stability make it suitable for precise, controlled delivery of indium in vapor phase processes. It is also employed in atomic layer deposition (ALD) for advanced microelectronics and nanoscale device fabrication. Its high purity and clean decomposition characteristics help achieve uniform, high-quality films essential in semiconductor manufacturing.
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