Triethylsilane
99.9%
- Product Code: 238114
CAS:
617-86-7
| Molecular Weight: | 116.28 g./mol | Molecular Formula: | C₆H₁₆Si |
|---|---|---|---|
| EC Number: | 210-535-3 | MDL Number: | MFCD00009018 |
| Melting Point: | -157 °C | Boiling Point: | 107-108 °C(lit.) |
| Density: | 0.728 g/mL at 25 °C(lit.) | Storage Condition: | Room temperature, light-proof, inert gas |
Product Description:
Used as a reducing agent in organic synthesis, particularly for the reduction of carbonyl compounds, imines, and nitro groups. It serves as a source of hydride in the presence of catalysts or Lewis acids. Commonly employed in hydrosilylation reactions, which are key steps in the production of silicon-based materials and pharmaceuticals. Also utilized as a silylating agent to protect functional groups during multi-step syntheses. Plays a role in the preparation of silicon polymers and resins by acting as a chain transfer agent or terminator in polymerization processes. Its volatility makes it suitable for use in gas-phase reactions and thin-film deposition techniques.
Product Specification:
| Test | Specification |
|---|---|
| REFRACTIVE INDEX (20 Degree Celsius) | 1.41-1.413 |
| Purity (%) | 99.85-100 |
| APPEARANCE | Colorless liquid |
| INFRARED SPECTRUM | Conforms to structure |
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 25ml | 10-20 days | ฿1,610.00 |
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Triethylsilane
Used as a reducing agent in organic synthesis, particularly for the reduction of carbonyl compounds, imines, and nitro groups. It serves as a source of hydride in the presence of catalysts or Lewis acids. Commonly employed in hydrosilylation reactions, which are key steps in the production of silicon-based materials and pharmaceuticals. Also utilized as a silylating agent to protect functional groups during multi-step syntheses. Plays a role in the preparation of silicon polymers and resins by acting as a chain transfer agent or terminator in polymerization processes. Its volatility makes it suitable for use in gas-phase reactions and thin-film deposition techniques.
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