Trimethylindium
97%
- Product Code: 238558
CAS:
3385-78-2
| Molecular Weight: | 159.922 g./mol | Molecular Formula: | C₃H₉In |
|---|---|---|---|
| EC Number: | MDL Number: | ||
| Melting Point: | 88 °C | Boiling Point: | |
| Density: | Storage Condition: | 2-8°C |
Product Description:
Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for the growth of indium-containing semiconductor materials. It plays a critical role in the fabrication of compound semiconductors such as indium phosphide (InP), indium arsenide (InAs), and indium nitride (InN), which are essential in optoelectronic devices. Common applications include high-speed electronics, laser diodes, photodetectors, and solar cells. Its high reactivity and volatility make it suitable for precise, controlled deposition of thin films at relatively low temperatures.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 1g | 10-20 days | ฿78,160.00 |
+
-
|
Trimethylindium
Used primarily as a precursor in metal-organic chemical vapor deposition (MOCVD) for the growth of indium-containing semiconductor materials. It plays a critical role in the fabrication of compound semiconductors such as indium phosphide (InP), indium arsenide (InAs), and indium nitride (InN), which are essential in optoelectronic devices. Common applications include high-speed electronics, laser diodes, photodetectors, and solar cells. Its high reactivity and volatility make it suitable for precise, controlled deposition of thin films at relatively low temperatures.
| Mechanism | - |
| Appearance | - |
| Longevity | - |
| Strength | - |
| Storage | - |
| Shelf Life | - |
| Allergen(s) | - |
| Dosage (Range) | - |
| Recommended Dosage | - |
| Dosage (Per Day) | - |
| Recommended Dosage (Per Day) | - |
| Mix Method | - |
| Heat Resistance | - |
| Stable in pH range | - |
| Solubility | - |
| Product Types | - |
| INCI | - |
Purchase History for
Loading purchase history...
Cart
No products
Subtotal:
฿0.00
฿0.00
Total :