Tris(dimethylamine)gallium
97%
- Product Code: 238559
CAS:
180335-73-3
| Molecular Weight: | 201.95 g./mol | Molecular Formula: | C₆H₁₈GaN₃ |
|---|---|---|---|
| EC Number: | MDL Number: | ||
| Melting Point: | 104-105.5 °C(lit.) | Boiling Point: | 55.7 °C at 760 mmHg |
| Density: | Storage Condition: | 2-8°C |
Product Description:
Used as a precursor in metalorganic vapor phase epitaxy (MOVPE) for depositing gallium-containing semiconductor materials. It enables precise growth of gallium nitride (GaN) and related compound semiconductors used in optoelectronic devices such as LEDs, laser diodes, and high-power transistors. Its high volatility and thermal stability make it suitable for low-temperature deposition processes, improving crystal quality and device performance. Also explored in research for thin-film applications in advanced electronic and photonic devices.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 1g | 10-20 days | ฿60,600.00 |
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Tris(dimethylamine)gallium
Used as a precursor in metalorganic vapor phase epitaxy (MOVPE) for depositing gallium-containing semiconductor materials. It enables precise growth of gallium nitride (GaN) and related compound semiconductors used in optoelectronic devices such as LEDs, laser diodes, and high-power transistors. Its high volatility and thermal stability make it suitable for low-temperature deposition processes, improving crystal quality and device performance. Also explored in research for thin-film applications in advanced electronic and photonic devices.
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