Tetrakis(dimethylamino)zirconium
Electronic grade, ≥99.99% trace metals basis
- Product Code: 238730
CAS:
19756-04-8
Molecular Weight: | 267.53 g./mol | Molecular Formula: | C₈H₂₄N₄Zr |
---|---|---|---|
EC Number: | MDL Number: | ||
Melting Point: | Boiling Point: | ||
Density: | Storage Condition: | 2-8℃, drying, inert gas storage |
Product Description:
Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for fabricating zirconium-containing thin films. These films serve as high-k dielectrics in semiconductor devices, offering excellent insulating properties and thermal stability. The compound’s high volatility and reactivity make it suitable for low-temperature deposition, enabling integration into advanced microelectronic manufacturing. It is also explored in catalysis and materials synthesis where controlled release of zirconium is required.
Sizes / Availability / Pricing:
Size | Availability | Price | Quantity |
---|---|---|---|
250mg | 10-20 days | $231.33 |
+
-
|
Tetrakis(dimethylamino)zirconium
Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for fabricating zirconium-containing thin films. These films serve as high-k dielectrics in semiconductor devices, offering excellent insulating properties and thermal stability. The compound’s high volatility and reactivity make it suitable for low-temperature deposition, enabling integration into advanced microelectronic manufacturing. It is also explored in catalysis and materials synthesis where controlled release of zirconium is required.
Mechanism | - |
Appearance | - |
Longevity | - |
Strength | - |
Storage | - |
Shelf Life | - |
Allergen(s) | - |
Dosage (Range) | - |
Recommended Dosage | - |
Dosage (Per Day) | - |
Recommended Dosage (Per Day) | - |
Mix Method | - |
Heat Resistance | - |
Stable in pH range | - |
Solubility | - |
Product Types | - |
INCI | - |
Purchase History for
Loading purchase history...
Cart
No products
Subtotal:
$0.00
$0.00
Total :