Tetrakis(trifluoro-2,4-pentanedionato)zirconium(IV)

98%

  • Product Code: 241212
  CAS:    17499-68-2
Molecular Weight: 703.54 g./mol Molecular Formula: C₂₀H₁₆F₁₂O₈Zr
EC Number: MDL Number: MFCD00015317
Melting Point: 129-133°C Boiling Point:
Density: Storage Condition: Room temperature
Product Description: Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing zirconium-containing thin films, especially zirconia (ZrO₂) layers. These films serve as high-k dielectrics in semiconductor devices, gate insulators in transistors, and protective coatings in optical and thermal barrier applications. Its volatility and thermal stability make it suitable for low-temperature deposition processes. Also employed in the synthesis of zirconium-doped materials and advanced nanomaterials for catalysis and sensors.
Sizes / Availability / Pricing:
Size Availability Price Quantity
0.250 G 10-20 days ฿2,320.00
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Tetrakis(trifluoro-2,4-pentanedionato)zirconium(IV)
Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing zirconium-containing thin films, especially zirconia (ZrO₂) layers. These films serve as high-k dielectrics in semiconductor devices, gate insulators in transistors, and protective coatings in optical and thermal barrier applications. Its volatility and thermal stability make it suitable for low-temperature deposition processes. Also employed in the synthesis of zirconium-doped materials and advanced nanomaterials for catalysis and sensors.
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