Tetrakis(trifluoro-2,4-pentanedionato)zirconium(IV)
98%
- Product Code: 241212
CAS:
17499-68-2
Molecular Weight: | 703.54 g./mol | Molecular Formula: | C₂₀H₁₆F₁₂O₈Zr |
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EC Number: | MDL Number: | MFCD00015317 | |
Melting Point: | 129-133°C | Boiling Point: | |
Density: | Storage Condition: | Room temperature |
Product Description:
Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing zirconium-containing thin films, especially zirconia (ZrO₂) layers. These films serve as high-k dielectrics in semiconductor devices, gate insulators in transistors, and protective coatings in optical and thermal barrier applications. Its volatility and thermal stability make it suitable for low-temperature deposition processes. Also employed in the synthesis of zirconium-doped materials and advanced nanomaterials for catalysis and sensors.
Sizes / Availability / Pricing:
Size | Availability | Price | Quantity |
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0.250 G | 10-20 days | ฿2,320.00 |
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Tetrakis(trifluoro-2,4-pentanedionato)zirconium(IV)
Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing zirconium-containing thin films, especially zirconia (ZrO₂) layers. These films serve as high-k dielectrics in semiconductor devices, gate insulators in transistors, and protective coatings in optical and thermal barrier applications. Its volatility and thermal stability make it suitable for low-temperature deposition processes. Also employed in the synthesis of zirconium-doped materials and advanced nanomaterials for catalysis and sensors.
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