Tris(4-tert-butylphenyl)sulfonium perfluoro-1-butanesulfonate
≥99% trace metals basis
- Product Code: 242126
CAS:
241806-75-7
| Molecular Weight: | 730.79 g./mol | Molecular Formula: | [(CH₃)₃C₆H₄]₃SC₄F₉SO₃ |
|---|---|---|---|
| EC Number: | MDL Number: | ||
| Melting Point: | 194 - 197 °C - lit. | Boiling Point: | |
| Density: | Storage Condition: | Room temperature |
Product Description:
Used as a photoacid generator (PAG) in advanced photolithography processes, particularly in semiconductor manufacturing. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases strong sulfonic acids that catalyze chemical transformations in photoresist materials, enabling precise pattern formation on silicon wafers. Its thermal stability and efficient acid generation make it suitable for high-resolution patterning required in microelectronics. The bulky organic groups help reduce acid diffusion, improving image resolution and enabling smaller feature sizes. Commonly employed in chemically amplified resists for fabricating integrated circuits.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 50mg | 10-20 days | ฿8,760.00 |
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| 250mg | 10-20 days | ฿24,890.00 |
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Tris(4-tert-butylphenyl)sulfonium perfluoro-1-butanesulfonate
Used as a photoacid generator (PAG) in advanced photolithography processes, particularly in semiconductor manufacturing. Upon exposure to deep ultraviolet (DUV) or extreme ultraviolet (EUV) light, it releases strong sulfonic acids that catalyze chemical transformations in photoresist materials, enabling precise pattern formation on silicon wafers. Its thermal stability and efficient acid generation make it suitable for high-resolution patterning required in microelectronics. The bulky organic groups help reduce acid diffusion, improving image resolution and enabling smaller feature sizes. Commonly employed in chemically amplified resists for fabricating integrated circuits.
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