Tetrakis(dimethylamido)hafnium
99.9999% metals basis
- Product Code: 242434
CAS:
19782-68-4
| Molecular Weight: | 354.79 g./mol | Molecular Formula: | C₈H₂₄HfN₄ |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD01862473 | |
| Melting Point: | 26-29 °C (lit.) | Boiling Point: | 85 °C at 0.1 mmHg (lit.) |
| Density: | 1.098 g/cm3 at 25 °C (lit.) | Storage Condition: | Room temperature, dry |
Product Description:
Widely used in semiconductor manufacturing, this chemical serves as a precursor for depositing hafnium-containing thin films via atomic layer deposition (ALD) and chemical vapor deposition (CVD). It enables the formation of high-k dielectric layers, which are critical in advanced microelectronic devices such as transistors and capacitors. Its high reactivity and volatility allow for precise, low-temperature film growth, making it suitable for fabricating next-generation integrated circuits. Additionally, it is explored in the development of metal-insulator-metal structures and gate oxides where uniformity and interface quality are essential.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 100g | 10-20 days | ฿389,990.00 |
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| 25g | 10-20 days | ฿148,990.00 |
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Tetrakis(dimethylamido)hafnium
Widely used in semiconductor manufacturing, this chemical serves as a precursor for depositing hafnium-containing thin films via atomic layer deposition (ALD) and chemical vapor deposition (CVD). It enables the formation of high-k dielectric layers, which are critical in advanced microelectronic devices such as transistors and capacitors. Its high reactivity and volatility allow for precise, low-temperature film growth, making it suitable for fabricating next-generation integrated circuits. Additionally, it is explored in the development of metal-insulator-metal structures and gate oxides where uniformity and interface quality are essential.
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