Tris[N,N-bis(trimethylsilyl)amide]lanthanum(III)
97%
- Product Code: 243130
CAS:
35788-99-9
| Molecular Weight: | 620.065 g./mol | Molecular Formula: | C₁₈H₅₄LaN₃Si₆ |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00271009 | |
| Melting Point: | 149-153 °C(lit.) | Boiling Point: | |
| Density: | Storage Condition: | 2-8°C, sealed, dry |
Product Description:
Used as a highly reactive precursor in the synthesis of lanthanum-containing materials, especially in vapor deposition processes for producing thin films. Its volatile nature and thermal stability make it suitable for chemical vapor deposition (CVD) and atomic layer deposition (ALD), where it helps form high-purity lanthanum oxide or lanthanum silicate films. These films are critical in semiconductor devices as gate dielectrics due to their high dielectric constants and good thermal stability. Also employed in research for preparing lanthanum-based catalysts and in organometallic chemistry as a strong base or transamination agent.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 5g | 10-20 days | ฿33,950.00 |
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Tris[N,N-bis(trimethylsilyl)amide]lanthanum(III)
Used as a highly reactive precursor in the synthesis of lanthanum-containing materials, especially in vapor deposition processes for producing thin films. Its volatile nature and thermal stability make it suitable for chemical vapor deposition (CVD) and atomic layer deposition (ALD), where it helps form high-purity lanthanum oxide or lanthanum silicate films. These films are critical in semiconductor devices as gate dielectrics due to their high dielectric constants and good thermal stability. Also employed in research for preparing lanthanum-based catalysts and in organometallic chemistry as a strong base or transamination agent.
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