Tris[N,N-bis(trimethylsilyl)amide]erbium(III)

98%

  • Product Code: 243131
  CAS:    103457-72-3
Molecular Weight: 648.413 g./mol Molecular Formula: C₁₈H₅₄ErN₃Si₆
EC Number: MDL Number: MFCD00271002
Melting Point: Boiling Point: 165 °C at 0.04 mmHg
Density: Storage Condition: -20°C, Sealed, Drying, Inert Gas
Product Description: Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing erbium-containing thin films, particularly in optoelectronic devices. Its high volatility and thermal stability make it suitable for introducing erbium into semiconductor materials, enabling applications in photoluminescent coatings, fiber optics, and integrated optical amplifiers. Also employed in research for doping crystalline and amorphous matrices to achieve efficient infrared emission, useful in telecommunications and solid-state lasers.
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Size Availability Price Quantity
1g 10-20 days $1,196.48
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Tris[N,N-bis(trimethylsilyl)amide]erbium(III)
Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing erbium-containing thin films, particularly in optoelectronic devices. Its high volatility and thermal stability make it suitable for introducing erbium into semiconductor materials, enabling applications in photoluminescent coatings, fiber optics, and integrated optical amplifiers. Also employed in research for doping crystalline and amorphous matrices to achieve efficient infrared emission, useful in telecommunications and solid-state lasers.
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