Tris[N,N-bis(trimethylsilyl)amide]erbium(III)
98%
- Product Code: 243131
CAS:
103457-72-3
Molecular Weight: | 648.413 g./mol | Molecular Formula: | C₁₈H₅₄ErN₃Si₆ |
---|---|---|---|
EC Number: | MDL Number: | MFCD00271002 | |
Melting Point: | Boiling Point: | 165 °C at 0.04 mmHg | |
Density: | Storage Condition: | -20°C, Sealed, Drying, Inert Gas |
Product Description:
Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing erbium-containing thin films, particularly in optoelectronic devices. Its high volatility and thermal stability make it suitable for introducing erbium into semiconductor materials, enabling applications in photoluminescent coatings, fiber optics, and integrated optical amplifiers. Also employed in research for doping crystalline and amorphous matrices to achieve efficient infrared emission, useful in telecommunications and solid-state lasers.
Sizes / Availability / Pricing:
Size | Availability | Price | Quantity |
---|---|---|---|
1g | 10-20 days | $1,196.48 |
+
-
|
Tris[N,N-bis(trimethylsilyl)amide]erbium(III)
Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing erbium-containing thin films, particularly in optoelectronic devices. Its high volatility and thermal stability make it suitable for introducing erbium into semiconductor materials, enabling applications in photoluminescent coatings, fiber optics, and integrated optical amplifiers. Also employed in research for doping crystalline and amorphous matrices to achieve efficient infrared emission, useful in telecommunications and solid-state lasers.
Mechanism | - |
Appearance | - |
Longevity | - |
Strength | - |
Storage | - |
Shelf Life | - |
Allergen(s) | - |
Dosage (Range) | - |
Recommended Dosage | - |
Dosage (Per Day) | - |
Recommended Dosage (Per Day) | - |
Mix Method | - |
Heat Resistance | - |
Stable in pH range | - |
Solubility | - |
Product Types | - |
INCI | - |
Purchase History for
Loading purchase history...
Cart
No products
Subtotal:
$0.00
$0.00
Total :