WDR50103
10mM in DMSO
- Product Code: 245875
CAS:
890190-22-4
| Molecular Weight: | 383.44 g./mol | Molecular Formula: | C₂₁H₂₅N₃O₄ |
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| Density: | Storage Condition: | -20°C |
Product Description:
WDR50103 is primarily used as a high-performance additive in advanced semiconductor manufacturing processes. It functions as a key component in extreme ultraviolet (EUV) photoresist formulations, enabling precise patterning at nanometer-scale dimensions. Its unique molecular structure enhances lithographic resolution, improves etch resistance, and reduces defectivity during wafer processing. The compound is especially effective in multi-patterning techniques, supporting the production of cutting-edge logic and memory chips. Due to its stability under high-energy radiation, WDR50103 contributes to improved process latitude and yield in sub-7nm technology nodes. It is compatible with chemically amplified resist systems and is integrated into spin-coating processes for uniform thin-film deposition. Its application is critical in advancing Moore’s Law and enabling next-generation microelectronics.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 1ml | 10-20 days | ฿6,490.00 |
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WDR50103
WDR50103 is primarily used as a high-performance additive in advanced semiconductor manufacturing processes. It functions as a key component in extreme ultraviolet (EUV) photoresist formulations, enabling precise patterning at nanometer-scale dimensions. Its unique molecular structure enhances lithographic resolution, improves etch resistance, and reduces defectivity during wafer processing. The compound is especially effective in multi-patterning techniques, supporting the production of cutting-edge logic and memory chips. Due to its stability under high-energy radiation, WDR50103 contributes to improved process latitude and yield in sub-7nm technology nodes. It is compatible with chemically amplified resist systems and is integrated into spin-coating processes for uniform thin-film deposition. Its application is critical in advancing Moore’s Law and enabling next-generation microelectronics.
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