Yttrium(III) isopropoxide
90%
- Product Code: 246229
CAS:
2172-12-5
| Molecular Weight: | 266.17 g./mol | Molecular Formula: | C₉H₂₁O₃Y |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00015641 | |
| Melting Point: | Boiling Point: | 106°C | |
| Density: | 0.9560 | Storage Condition: | Room temperature, seal, dry |
Product Description:
Used as a precursor in sol-gel processes for synthesizing yttrium-containing oxide materials, particularly yttria-stabilized zirconia (YSZ), which serves in thermal barrier coatings for high-temperature applications such as gas turbines and aerospace components. Also employed in the fabrication of phosphors, luminescent materials, and transparent conducting oxides due to its ability to form uniform thin films and nanoparticles. Its reactivity makes it suitable for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of yttrium-based dielectrics in electronic devices. Additionally, it finds use in catalyst preparation and advanced ceramic synthesis where precise stoichiometry and high purity are required.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 200mg | 10-20 days | ฿1,790.00 |
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| 1g | 10-20 days | ฿7,340.00 |
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Yttrium(III) isopropoxide
Used as a precursor in sol-gel processes for synthesizing yttrium-containing oxide materials, particularly yttria-stabilized zirconia (YSZ), which serves in thermal barrier coatings for high-temperature applications such as gas turbines and aerospace components. Also employed in the fabrication of phosphors, luminescent materials, and transparent conducting oxides due to its ability to form uniform thin films and nanoparticles. Its reactivity makes it suitable for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of yttrium-based dielectrics in electronic devices. Additionally, it finds use in catalyst preparation and advanced ceramic synthesis where precise stoichiometry and high purity are required.
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