Zinc hexafluoro-2, 4-pentanedionate dihydrate
- Product Code: 246769
CAS:
16743-33-2
| Molecular Weight: | 479.47(anhy) g./mol | Molecular Formula: | C₁₀H₂F₁₂O₄Zn•₂H₂O |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00150577 | |
| Melting Point: | 157-158 °C | Boiling Point: | |
| Density: | Storage Condition: | Room temperature, seal, dry |
Product Description:
Used primarily as a precursor in chemical vapor deposition (CVD) processes to produce zinc-containing thin films, especially zinc oxide (ZnO). These films are essential in optoelectronic devices due to their transparency and semiconducting properties. Commonly applied in the fabrication of transparent conductive coatings for solar cells, flat panel displays, and light-emitting diodes (LEDs). Also utilized in the synthesis of nanomaterials and catalysts where controlled release of zinc ions is required. Its volatility and thermal stability make it suitable for deposition at moderate temperatures, enabling integration into temperature-sensitive device manufacturing.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 5.000 | 10-20 days | ฿22,280.00 |
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Zinc hexafluoro-2, 4-pentanedionate dihydrate
Used primarily as a precursor in chemical vapor deposition (CVD) processes to produce zinc-containing thin films, especially zinc oxide (ZnO). These films are essential in optoelectronic devices due to their transparency and semiconducting properties. Commonly applied in the fabrication of transparent conductive coatings for solar cells, flat panel displays, and light-emitting diodes (LEDs). Also utilized in the synthesis of nanomaterials and catalysts where controlled release of zinc ions is required. Its volatility and thermal stability make it suitable for deposition at moderate temperatures, enabling integration into temperature-sensitive device manufacturing.
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