3-(2-(2-(2-Methoxyethoxy)ethoxy)ethoxy)thiophene
97%
- Product Code: 44223
CAS:
282540-12-9
Molecular Weight: | 246.32 g./mol | Molecular Formula: | C₁₁H₁₈O₄S |
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EC Number: | MDL Number: | MFCD31715118 | |
Melting Point: | Boiling Point: | ||
Density: | Storage Condition: | 2-8°C, protected from light, stored in an inert gas |
Product Description:
This chemical is primarily utilized in the field of organic electronics, particularly in the development of conductive polymers. Its structure, featuring multiple ethoxy groups, enhances solubility in various solvents, making it suitable for solution-based processing techniques like spin coating and inkjet printing. It is often incorporated into polythiophene derivatives to improve their electrical conductivity and mechanical flexibility, which are critical for applications in organic light-emitting diodes (OLEDs), organic photovoltaics (OPVs), and flexible electronic devices. Additionally, its thiophene backbone contributes to the material's ability to transport charge carriers efficiently, making it valuable in the fabrication of thin-film transistors and sensors.
Sizes / Availability / Pricing:
Size (g) | Availability | Price | Quantity |
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0.100 | 10-20 days | $48.60 |
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0.250 | 10-20 days | $81.01 |
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1.000 | 10-20 days | $243.02 |
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3-(2-(2-(2-Methoxyethoxy)ethoxy)ethoxy)thiophene
This chemical is primarily utilized in the field of organic electronics, particularly in the development of conductive polymers. Its structure, featuring multiple ethoxy groups, enhances solubility in various solvents, making it suitable for solution-based processing techniques like spin coating and inkjet printing. It is often incorporated into polythiophene derivatives to improve their electrical conductivity and mechanical flexibility, which are critical for applications in organic light-emitting diodes (OLEDs), organic photovoltaics (OPVs), and flexible electronic devices. Additionally, its thiophene backbone contributes to the material's ability to transport charge carriers efficiently, making it valuable in the fabrication of thin-film transistors and sensors.
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