Tetrakis(dimethylamido)tin(IV)
99.9% trace metals basis
- Product Code: 58507
CAS:
1066-77-9
| Molecular Weight: | 295.01 g./mol | Molecular Formula: | C₈H₂₄N₄Sn |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00014860 | |
| Melting Point: | Boiling Point: | 53-55 °C at 1.013 hPa | |
| Density: | 1.169 g/cm3 | Storage Condition: | room temperature, dry, inert gas |
Product Description:
Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create thin films of tin-based materials, such as tin nitride or tin oxide, which are essential in semiconductor manufacturing and electronic devices. It is also employed in the synthesis of organotin compounds, which find applications in catalysts, stabilizers for PVC, and biocides. The compound’s high reactivity and volatility make it suitable for precise deposition in nanotechnology and advanced material research. Additionally, it plays a role in the development of transparent conductive coatings used in touchscreens and solar panels.
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 0.100 | 10-20 days | ฿2,223.00 |
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Tetrakis(dimethylamido)tin(IV)
Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create thin films of tin-based materials, such as tin nitride or tin oxide, which are essential in semiconductor manufacturing and electronic devices. It is also employed in the synthesis of organotin compounds, which find applications in catalysts, stabilizers for PVC, and biocides. The compound’s high reactivity and volatility make it suitable for precise deposition in nanotechnology and advanced material research. Additionally, it plays a role in the development of transparent conductive coatings used in touchscreens and solar panels.
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