Bis(4-tert-butylphenyl)iodoniump-toluenesulfonate
≥99% trace metals basis
- Product Code: 73494
CAS:
131717-99-2
| Molecular Weight: | 564.52 g./mol | Molecular Formula: | C₂₇H₃₃IO₃S |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD02683472 | |
| Melting Point: | 237 - 240 °C | Boiling Point: | |
| Density: | Storage Condition: | room temperature |
Product Description:
This chemical is primarily used as a photoacid generator (PAG) in photoresist formulations for the semiconductor and electronics industries. When exposed to ultraviolet (UV) light, it releases strong acids that catalyze the chemical reactions necessary for patterning microelectronic devices. Its high efficiency and stability make it suitable for advanced lithography processes, including deep UV (DUV) and extreme UV (EUV) lithography, which are critical for manufacturing high-performance integrated circuits. Additionally, it is employed in the production of flat-panel displays and other micro-scale components, where precise and high-resolution patterning is essential. Its compatibility with various resist systems and ability to generate clean patterns contribute to its widespread use in cutting-edge technology fabrication.
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 0.050 | 10-20 days | ฿2,250.00 |
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| 0.250 | 10-20 days | ฿7,209.00 |
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Bis(4-tert-butylphenyl)iodoniump-toluenesulfonate
This chemical is primarily used as a photoacid generator (PAG) in photoresist formulations for the semiconductor and electronics industries. When exposed to ultraviolet (UV) light, it releases strong acids that catalyze the chemical reactions necessary for patterning microelectronic devices. Its high efficiency and stability make it suitable for advanced lithography processes, including deep UV (DUV) and extreme UV (EUV) lithography, which are critical for manufacturing high-performance integrated circuits. Additionally, it is employed in the production of flat-panel displays and other micro-scale components, where precise and high-resolution patterning is essential. Its compatibility with various resist systems and ability to generate clean patterns contribute to its widespread use in cutting-edge technology fabrication.
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