bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate
98%
- Product Code: 79688
CAS:
84563-54-2
| Molecular Weight: | 542.394 g./mol | Molecular Formula: | C₂₁H₂₆F₃IO₃S |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD02683471 | |
| Melting Point: | 162-166℃ | Boiling Point: | |
| Density: | Storage Condition: | room temperature, inert gas |
Product Description:
This chemical is primarily used as a photoacid generator (PAG) in photolithography processes, particularly in the semiconductor and electronics industries. It plays a critical role in the production of microchips and other electronic components by generating acid upon exposure to ultraviolet (UV) light. The acid produced catalyzes chemical reactions that help in patterning and etching silicon wafers, enabling the creation of intricate circuit designs. Its high thermal stability and efficiency make it suitable for advanced lithographic techniques, including deep UV and extreme UV lithography. Additionally, it is utilized in the fabrication of photoresists, where it enhances the resolution and precision of the final product.
Product Specification:
| Test | Specification |
|---|---|
| APPEARANCE | White to Off-White Powder or Crystals |
| PURITY | 97.5-100 |
| Infrared spectrum | Conforms to Structure |
| NMR | Conforms to Structure |
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 0.250 | 10-20 days | ฿684.00 |
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| 1.000 | 10-20 days | ฿2,340.00 |
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| 5.000 | 10-20 days | ฿8,640.00 |
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bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate
This chemical is primarily used as a photoacid generator (PAG) in photolithography processes, particularly in the semiconductor and electronics industries. It plays a critical role in the production of microchips and other electronic components by generating acid upon exposure to ultraviolet (UV) light. The acid produced catalyzes chemical reactions that help in patterning and etching silicon wafers, enabling the creation of intricate circuit designs. Its high thermal stability and efficiency make it suitable for advanced lithographic techniques, including deep UV and extreme UV lithography. Additionally, it is utilized in the fabrication of photoresists, where it enhances the resolution and precision of the final product.
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