1,2-Bis(trichlorosilyl)ethane
≥97%
- Product Code: 88080
CAS:
2504-64-5
| Molecular Weight: | 296.92 g./mol | Molecular Formula: | C₂H₄Cl₆Si₂ |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00013601 | |
| Melting Point: | Boiling Point: | ||
| Density: | Storage Condition: | room temperature, dry |
Product Description:
Used primarily in the semiconductor industry as a precursor for depositing silicon-based thin films through chemical vapor deposition (CVD) processes. It plays a critical role in the fabrication of microelectronic devices, enabling the creation of high-quality silicon dioxide or silicon nitride layers essential for insulation and passivation. Additionally, it is employed in the production of advanced materials like silicon carbide, which are utilized in high-temperature and high-power applications. Its ability to form stable, uniform coatings makes it valuable in enhancing the performance and durability of electronic components.
Product Specification:
| Test | Specification |
|---|---|
| APPEARANCE | White or Colorless to Light yellow powder to lump to clear liquid |
| PURITY | 96.5-100 |
| Infrared spectrum | Conforms to Structure |
| NMR | Conforms to Structure |
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 1.000 | 10-20 days | ฿1,990.00 |
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| 5.000 | 10-20 days | ฿8,400.00 |
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1,2-Bis(trichlorosilyl)ethane
Used primarily in the semiconductor industry as a precursor for depositing silicon-based thin films through chemical vapor deposition (CVD) processes. It plays a critical role in the fabrication of microelectronic devices, enabling the creation of high-quality silicon dioxide or silicon nitride layers essential for insulation and passivation. Additionally, it is employed in the production of advanced materials like silicon carbide, which are utilized in high-temperature and high-power applications. Its ability to form stable, uniform coatings makes it valuable in enhancing the performance and durability of electronic components.
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