Zinc bis[bis(trimethylsilyl)amide]
97%
- Product Code: 88521
CAS:
14760-26-0
| Molecular Weight: | 386.16 g./mol | Molecular Formula: | C₁₂H₃₆N₂Si₄Zn |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD01321225 | |
| Melting Point: | 12.5 °C (lit.) | Boiling Point: | |
| Density: | 0.957 g/mL at 25 °C (lit.) | Storage Condition: | room temperature |
Product Description:
Used primarily as a precursor in the synthesis of zinc-containing materials, it plays a crucial role in the production of thin films and nanoparticles through chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques. These materials are essential in the fabrication of semiconductors, optoelectronic devices, and advanced coatings. Additionally, it serves as a catalyst in organic reactions, particularly in the polymerization of cyclic esters and the formation of complex organic molecules. Its ability to facilitate precise control over material properties makes it valuable in research and industrial applications focused on nanotechnology and advanced material science.
Sizes / Availability / Pricing:
| Size (g) | Availability | Price | Quantity |
|---|---|---|---|
| 1.000 | 10-20 days | ฿12,186.00 |
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Zinc bis[bis(trimethylsilyl)amide]
Used primarily as a precursor in the synthesis of zinc-containing materials, it plays a crucial role in the production of thin films and nanoparticles through chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques. These materials are essential in the fabrication of semiconductors, optoelectronic devices, and advanced coatings. Additionally, it serves as a catalyst in organic reactions, particularly in the polymerization of cyclic esters and the formation of complex organic molecules. Its ability to facilitate precise control over material properties makes it valuable in research and industrial applications focused on nanotechnology and advanced material science.
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