Hafnium(IV) ethoxide
99.9% (metals basis)
- Product Code: 194522
CAS:
13428-80-3
| Molecular Weight: | 358.73 g./mol | Molecular Formula: | Hf(OC₂H₅)₄ |
|---|---|---|---|
| EC Number: | MDL Number: | MFCD00070459 | |
| Melting Point: | 178-180ºC | Boiling Point: | 180-200ºC 13mm |
| Density: | Storage Condition: | Room temperature, seal, dry |
Product Description:
Used as a precursor in the production of hafnium dioxide (HfO₂) thin films through sol-gel processes and chemical vapor deposition (CVD). These films are critical in semiconductor manufacturing, particularly as high-k dielectric materials in advanced transistors and integrated circuits. Offers good thermal stability and high dielectric constant, enabling improved performance and reduced leakage current in microelectronic devices. Also employed in the synthesis of hafnia-based coatings and nanomaterials for optical and protective applications. Its reactivity with moisture allows for controlled hydrolysis to form dense, uniform oxide layers suitable for electronic and optical coatings.
Sizes / Availability / Pricing:
| Size | Availability | Price | Quantity |
|---|---|---|---|
| 1g | 10-20 days | ฿11,190.00 |
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Hafnium(IV) ethoxide
Used as a precursor in the production of hafnium dioxide (HfO₂) thin films through sol-gel processes and chemical vapor deposition (CVD). These films are critical in semiconductor manufacturing, particularly as high-k dielectric materials in advanced transistors and integrated circuits. Offers good thermal stability and high dielectric constant, enabling improved performance and reduced leakage current in microelectronic devices. Also employed in the synthesis of hafnia-based coatings and nanomaterials for optical and protective applications. Its reactivity with moisture allows for controlled hydrolysis to form dense, uniform oxide layers suitable for electronic and optical coatings.
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