Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)hafnium(IV)

99.5% trace metals basis

  • Product Code: 240590
  CAS:    63370-90-1
Molecular Weight: 910.5 g./mol Molecular Formula: C₄₄H₇₆HfO₈
EC Number: MDL Number: MFCD01863471
Melting Point: 315-320ºC Boiling Point: 180ºC 0,1mm
Density: Storage Condition: Room temperature, seal, dry
Product Description: Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing hafnium-containing oxide films, especially high-k dielectric layers in semiconductor devices. Enables the growth of HfO₂ thin films with good uniformity and thermal stability, critical for advanced gate oxides in transistors and memory devices. Also applied in atomic layer deposition (ALD) processes due to its volatility and controlled decomposition behavior. Suitable for fabricating nanoscale electronic components where precise film thickness and high dielectric constant are essential.
Sizes / Availability / Pricing:
Size Availability Price Quantity
250mg 10-20 days $128.26
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Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)hafnium(IV)
Used as a precursor in metal-organic chemical vapor deposition (MOCVD) for depositing hafnium-containing oxide films, especially high-k dielectric layers in semiconductor devices. Enables the growth of HfO₂ thin films with good uniformity and thermal stability, critical for advanced gate oxides in transistors and memory devices. Also applied in atomic layer deposition (ALD) processes due to its volatility and controlled decomposition behavior. Suitable for fabricating nanoscale electronic components where precise film thickness and high dielectric constant are essential.
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