Tetrakis(dimethylamino)zirconium

≥98%

  • Product Code: 242250
  CAS:    19756-04-8
Molecular Weight: 267.53 g./mol Molecular Formula: C₈H₂₄N₄Zr
EC Number: MDL Number:
Melting Point: Boiling Point:
Density: Storage Condition: 2-8℃, drying, inert gas storage
Product Description: Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the formation of zirconium-containing thin films. These films serve as high-k dielectrics in semiconductor devices, offering improved gate insulation in transistors. The compound’s volatility and thermal stability make it suitable for low-temperature deposition, enabling integration into advanced microelectronic fabrication. It is also explored in catalysis and materials science for synthesizing zirconium-based nanomaterials and metal-organic frameworks.
Sizes / Availability / Pricing:
Size Availability Price Quantity
0.250 10-20 days ฿1,800.00
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1.000 10-20 days ฿6,800.00
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5.000 10-20 days ฿22,910.00
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Tetrakis(dimethylamino)zirconium
Used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the formation of zirconium-containing thin films. These films serve as high-k dielectrics in semiconductor devices, offering improved gate insulation in transistors. The compound’s volatility and thermal stability make it suitable for low-temperature deposition, enabling integration into advanced microelectronic fabrication. It is also explored in catalysis and materials science for synthesizing zirconium-based nanomaterials and metal-organic frameworks.
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