Thin Film Deposition Precursors for Semiconductors (3)

REAGENT

Bis(diethylamino)silane

90%

CAS:27804-64-4

Formula:C₈H₂₂N₂Si

MW:174.36 g/mol

฿5,490.00

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REAGENT

Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)magnesium

98%

CAS:21361-35-3

Formula:C₂₂H₃₈MgO₄

MW:390.84 g/mol

฿26,810.00

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REAGENT

AIC316

98%

CAS:348086-71-5

Formula:C₁₈H₁₈N₄O₃S₂

MW:402.49716 g/mol

฿610.00

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REAGENT

Hafnium(Ⅳ) acetylacetonate

97%

CAS:17475-67-1

Formula:C₂₀H₂₈HfO₈

MW:574.93 g/mol

฿720.00

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REAGENT

Ga solution

100µg/ml,5% HNO3

฿1,790.00

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REAGENT

Hf solution

100µg/ml,5% HNO3 and tr. HF

฿2,980.00

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REAGENT

Tetrakis(ethylmethylamino)zirconium(IV)

≥99.99% trace metals basis

CAS:175923-04-3

Formula:C₁₂H₃₂N₄Zr

MW:323.63 g/mol

฿17,640.00

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REAGENT

Holmium(III) 2,4-pentanedionate

99%

CAS:14589-33-4

Formula:C₁₅H₂₁HoO₆

MW:462.26 g/mol

฿10,990.00

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REAGENT

Trimethylgermanium chloride

98%

CAS:1529-47-1

Formula:C₃H₉ClGe

MW:153.20 g/mol

฿5,280.00

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REAGENT

Triethylaluminum

1.0 M solution in heptane, MkSeal

CAS:97-93-8

Formula:C₆H₁₅Al

MW:114.16 g/mol

฿4,760.00

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