Erbium Nitride

99%metals basis

Product Code: 184948

CAS: 12020-21-2

Molecular Weight:	181.27 g./mol	Molecular Formula:	ErN
EC Number:		MDL Number:	MFCD00049729
Melting Point:		Boiling Point:
Density:	10.6 g/cm3	Storage Condition:	Room temperature

Product Description: Used in advanced electronic and optoelectronic devices due to its semiconducting properties. Employed in the development of high-performance transistors and integrated circuits, especially in high-temperature or high-radiation environments. Serves as a dopant material in solid-state lasers and optical amplifiers for telecommunications. Investigated for use in magnetic storage media and spintronic applications because of its unique magnetic characteristics. Also utilized in research settings for epitaxial growth of nitride-based thin films.

Sizes / Availability / Pricing:

Size	Availability	Price	Quantity
25.000 G	10-20 days	฿40,000.00	+ -
5.000 G	10-20 days	฿12,000.00	+ -

Erbium Nitride

Used in advanced electronic and optoelectronic devices due to its semiconducting properties. Employed in the development of high-performance transistors and integrated circuits, especially in high-temperature or high-radiation environments. Serves as a dopant material in solid-state lasers and optical amplifiers for telecommunications. Investigated for use in magnetic storage media and spintronic applications because of its unique magnetic characteristics. Also utilized in research settings for epitaxial growth of nitride-based thin films.

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Erbium Nitride

99%metals basis

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