Tantalum Precursors

ALD Precursors

Precursors for atomic layer deposition of tantalum nitride (TaN) thin films used as diffusion barriers in semiconductor devices.

REAGENT

(tert-Butylimino)tris(ethyl(methyl)amino)tantalum

≥95%

CAS:511292-99-2

Formula:C₁₃H₃₃N₄Ta

MW:426.38 g/mol

฿5,160.00

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